the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor 2sk4070 switching n-channel power mos fet data sheet document no. d18573ej2v0ds00 (2nd edition) date published june 2007 ns printed in japan the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. 2006 description the 2sk4070 is n-channel mos fet device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, ac adapter. features ? low on-state resistance r ds(on) = 11 max. (v gs = 10 v, i d = 0.5 a) ? low gate charge q g = 5 nc typ. (v dd = 450 v, v gs = 10 v, i d = 1.0 a) ? gate voltage rating : 30 v ? avalanche capability ratings ordering information part number lead plating packing package 2sk4070-s15-ay note tube 70 p/tube to-251 (mp-3-a) typ. 0.39 g 2sk4070(1)-s27-ay note tube 75 p/tube to-251 (mp-3-b) typ. 0.34 g 2SK4070-ZK-E1-AY note 2sk4070-zk-e2-ay note pure sn (tin) tape 2500 p/reel to-252 (mp-3zk) typ. 0.27 g note pb-free (this product does not c ontain pb in external electrode.) absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0 v) v dss 600 v gate to source voltage (v ds = 0 v) v gss 30 v drain current (dc) (t c = 25 c) i d(dc) 1.0 a drain current (pulse) note1 i d(pulse) 4.0 a total power dissipation (t c = 25 c) p t1 22 w total power dissipation (t a = 25 c) note2 p t2 1.0 w channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c single avalanche current note3 i as 0.8 a single avalanche energy note3 e as 38.4 mj notes 1. pw 10 s, duty cycle 1% 2. mounted on glass epoxy board of 40 mm 40 mm 1.6 mm 3. starting t ch = 25c, v dd = 150 v, r g = 25 , v gs = 20 0 v (to-251) (to-252)
data sheet d18785ej2v0ds 2 2sk4070 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 600 v, v gs = 0 v 100 a gate leakage current i gss v gs = 30 v, v ds = 0 v 100 na gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 2.5 2.9 3.5 v forward transfer admittance note | y fs | v ds = 10 v, i d = 0.5 a 0.2 0.4 s drain to source on-state resistance note r ds(on) v gs = 10 v, i d = 0.5 a 9.2 11 input capacitance c iss v ds = 10 v, 110 pf output capacitance c oss v gs = 0 v, 50 pf reverse transfer capacitance c rss f = 1 mhz 11 pf turn-on delay time t d(on) v dd = 150 v, i d = 0.5 a, 7.5 ns rise time t r v gs = 10 v, 6 ns turn-off delay time t d(off) r g = 10 11 ns fall time t f 18 ns total gate charge q g v dd = 450 v, 5 nc gate to source charge q gs v gs = 10 v, 1 nc gate to drain charge q gd i d = 1.0 a 2.8 nc body diode forward voltage note v f(s-d) i f = 1.0 a, v gs = 0 v 0.86 1.5 v reverse recovery time t rr i f = 1.0 a, v gs = 0 v, 135 ns reverse recovery charge q rr di/dt = 100 a/ s 285 nc note pulsed test circuit 1 avalanche capability r g = 25 50 pg. l v dd v gs = 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 d.u.t. r l v dd i g = 2 ma v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet d18785ej2v0ds 3 2sk4070 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 050 25 75 100 150 125 120 100 80 60 40 20 0 t ch - channel temperature - c p t - total power dissipation - w 0 25 20 15 10 5 0 100 25 50 75 125 150 t c - case temperature - c forward bias safe operating area drain current vs. case temperature i d - drain current - a 0.01 0.1 1 10 100 1 10 100 1000 i d(pulse) i d(dc) r ds(on) limited (v gs = 10 v) 1 i m i s p w = 1 i 0 0 s p o w e r d i s s i p a t i o n l i m i t e d 10 ms tc = 25c, single v ds - drain to source voltage - v i d - drain current - a 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 t c - case temperature - c transient thermal resistance vs. pulse width r th(ch-a) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 125 c/w i r th(ch-c) = 5.68 c/w i single pulse pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
data sheet d18785ej2v0ds 4 2sk4070 drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 5 10 15 20 v gs = 20 v pulsed 10 v v ds - drain to source voltage - v i d - drain current - a 0.01 0.1 1 10 02468101214 v ds = 10 v pulsed t ch = ? 55 c ? 25 c 25 c 75 c 125 c 150 c v gs - gate to source voltage - v gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 0 50 100 150 v ds = 10 v i d = 1 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.01 0.1 1 10 0.01 0.1 1 10 v ds = 10 v pulsed t ch = ? 55 c 25 c 75 c 125 c 150 c ? 25 c i d - drain current - a drain to source on-state resistance vs. gate to source voltage drain to source on-state resistance vs. drain current r ds(on) - drain to source on-state resistance - 6 8 10 12 14 16 18 20 0 5 10 15 20 i d = 1.0 a 0.5 a pulsed v gs ? gate to source voltage - v r ds(on) - drain to source on-state resistance - 6 8 10 12 14 0.01 0.1 1 10 v gs = 10 v 20 v pulsed i d - drain current - a
data sheet d18785ej2v0ds 5 2sk4070 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - 0 5 10 15 20 25 -50 0 50 100 150 i d = 1.0 a 0.5 a v gs = 10 v pulsed t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 1 10 100 1000 0.1 1 10 100 c iss c oss c rss v gs = 0 v f = 1 mhz v ds - drain to source voltage ? v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 0.1 1 10 t r t d(off) t d(on) t f v dd = 150 v v gs = 10 v r g = 10 i d - drain current - a v ds ? drain to source voltage - v 0 100 200 300 400 500 600 0123456 0 1 2 3 4 5 6 7 8 9 10 v ds v gs i d = 1.0 a v dd = 450 v 250 v 150 v q g ? gate chage - nc v gs ? gate to source voltage - v source to drain diode forward voltage revwese recovery time vs. drain current i f ? diode forward current - a 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v gs = 10 v 0 v pulsed v f(s-d) ? source to drain voltage - v t rr ? reverse recovery time - ns 10 100 1000 0.1 1 10 100 di/dt = 100 a/ s v gs = 0 v i f ? diode forward current - a
data sheet d18785ej2v0ds 6 2sk4070 single avalanche current vs. inductive load single avalanche energy derating factor i as - single avalanche current - a 0.1 1 10 100 0.01 0.1 1 10 100 r g = 25 v dd = 150 v v gs = 20 0 v starting t ch = 25 c i as = 0.8 a e as = 38.4 mj l - inductive load - h energy derating factor - % 0 20 40 60 80 100 120 25 50 75 100 125 150 v dd = 150 v r g = 25 v gs = 20 0 v i as 0.8 a starting t ch - starting channel temperature - c
data sheet d18785ej2v0ds 7 2sk4070 package drawings (unit: mm) 1) to-251 (mp-3-a) 2) to-251 (mp-3-b) 6.6 0.2 mold area 2.3 0.1 0.5 0.1 0.76 0.1 0.5 0.1 no plating 5.3 typ. 0.7 typ. 6.1 0.2 1.8 0.2 9.3 typ. 4.0 min . 1.02 typ. 16.1 typ. 4.3 min. 1 4 23 1.14 max. 2.3 typ. 2.3 typ. 1. gate 2. drain 3. source 4. fin (drain) 1.gate 2.drain 3.source 4.fin (drain) 6.60.2 2.30.1 0.50.1 0.760.12 0.50.1 5.3 typ. 2.3 typ. 2.3 typ. 1.14 max. 1.06 typ. 11.25 typ. 4.13 typ. 1.04 typ. 6.10.2 1.10.13 2 13 4 3) to-252 (mp-3zk) equivalent circuit 6.5 0.2 2.3 0.1 0.5 0.1 0.76 0.12 0 to 0.25 0.5 0.1 1.0 no plating no plating 5.1 typ. 1.0 typ. 6.1 0.2 0.51 min. 4.0 min . 0.8 10.4 max. (9.8 typ.) 4.3 min. 1 4 23 1.14 max. 2.3 2.3 1. gate 2. drain 3. source 4. fin (drain) body diode source drain gate remark strong electric field, when exposed to this device, can ca use destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generat ion of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
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